Electrical Specifications
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Associated Gain at Minimum Noise Figure
R1=1.2 k Ω , Freq=1.575 GHz
20.5
22
R1=1.2 k Ω , Freq=2.14 GHz
R1=1.5 k Ω , Freq=1.575 GHz
R1=1.5 k Ω , Freq=2.14 GHz
Gnf
17
20.5
17.5
18.6
22
19
dB
Icc and RF Turn On Time
Enable trigger total time of 1.8 μ second from 0 to 2.75 V
Icc rise time from 0 to 76% of final current level
Icc rise time from 0 to 87% of final current level
RF on time from leading edge of enable trigger to RF turn-on
6.4
9.6
1.37
μ s
Note:
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG = |S21/S12(K ± sqrt(K2-1)) |, if K>1, MSG = |S21/S12|, if K<1
Table 5 lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies when Rbias is 1.2 k Ω . Further details on the application circuits are shown in Section 3,
“Application Information ”
Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(Vcc = 2.75V, TA = 25°C, Rbias =1.2k Ω unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1575 MHz (Refer to Figure 7 )
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75V, Rbias=1.2k Ω
Active Current @ 2.75V, Rbias=1.5k Ω
Active Gain
Bypass RF Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
Bypass Gain
f
G
NF
IIP3
P1dBoutput
Icc
Icc
S21
G
NF
IIP3
S21
18.4
-6.5
6.3
18
-6.5
24
-7
1575
19.4
1.28
-5
7.4
4.8
3.8
19
-5.5
6
25.5
4
-5.5
1.6
5.8
4.8
7
20
MHz
dB
dB
dBm
dBm
mA
mA
dB
dB
dB
dBm
μ A
dB
1960 MHz (Refer to Figure 8 )
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
f
G
NF
IIP3
P1dBoutput
17.7
-4
6
1960
18.7
1.37
-2.7
8
1.65
MHz
dB
dB
dBm
dBm
MC13851 Advance Information, Rev. 2.0
Freescale Semiconductor
5
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